Research results demonstrated in this article “Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications” is a result of common work between DTU Fotonik at Technical University of Denmark (Denmark), Universidad Carlos III de Madrid (Spain), Optical Networks Group at University College London (UK), KTH Royal Institute of Technology (Sweden), College of Information Science and Electrical Engineering at Zhejiang University (China), RISE Research Institutes of Sweden (Sweden), Institute of Telecommunications at Riga Technical University (Latvia) and School of SE-IEE at Shanghai Jiao Tong University (China)
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Abstract
Photonic generation of Terahertz (THz) carriers displays high potential for THz communications with a large tunable range and high modulation bandwidth. While many photonics-based THz generations have recently been demonstrated with discrete bulky components, their practical applications are significantly hindered by the large footprint and high energy consumption. Herein, we present an injection-locked heterodyne source based on generic foundry-fabricated photonic integrated circuits (PIC) attached to a uni-traveling carrier photodiode generating high-purity THz carriers. The generated THz carrier is tunable within the range of 0–1.4 THz, determined by the wavelength spacing between the two monolithically integrated distributed feedback (DFB) lasers. This scheme generates and transmits a 131 Gbits−1 net rate signal over a 10.7-m distance with −24 dBm emitted power at 0.4 THz. This monolithic dual-DFB PIC-based THz generation approach is a significant step towards fully integrated, cost-effective, and energy-efficient THz transmitters.
The article is in open access here.